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Zirconiumoxid Substrate
Materials properties
| Structure formula: |
ZrO2:Y(9.5% Y) |
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| State: |
monocrystalline (twin free) |
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| Crystal structure: |
cubic |
a = 0.5125 nm |
| Melting point: |
2780°C |
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| Thermal expansion coefficient: |
8 * 10-6/°C |
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| Dielectrical constant (e): |
27 |
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Substrate properties
| Production method: |
Skull method |
| Orientation: |
(100) |
| Orientation accuracy: |
£0.5° |
| Standard size: |
10mm x 10mm x thickness 0.5mm |
| Tolerance of length: |
+0 / -0.05mm |
| Tolerance of thickness: |
+0 / -0.02mm |
| Parallelness: |
£0.02° |
| Polishing: |
Standard: one side epi-polished |
| Flatness: |
£1µm / 10mm |
| Roughness of surface: |
Rmax £4nm (average Ra =< 1nm) |
| Scratches: |
none |
| Surface quality: |
with light microscope without defects |
Other sizes and specifications on request
© 1996 - 2008 MaTecK GmbH - Im Langenbroich 20 - D-52428 Juelich - phone: +49 (0) 2461 / 9352-0 - fax: +49 (0) 2461 / 9352-11 - Contact: info@mateck.de
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